Avalanche noise characteristics of single AlxGa1-xAs(0.3 < x < 0.6)-GaAs heterojunction APDs

Groves, C., Chia, C.K., Tozer, R.C., David, J.P.R. and Rees, G.J. (2005) Avalanche noise characteristics of single AlxGa1-xAs(0.3 < x < 0.6)-GaAs heterojunction APDs. IEEE Journal of Quantum Electronics, 41 (1). pp. 70-75. ISSN 0018-9197

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Copyright, Publisher and Additional Information: Copyright © 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: avalanche photodiodes (APDs), heterojunctions, impact ionization, noise
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Sherpa Assistant
Date Deposited: 19 Dec 2005
Last Modified: 06 Jun 2014 07:17
Published Version: http://dx.doi.org/10.1109/JQE.2004.838530
Status: Published
Publisher: IEEE
Refereed: Yes
Identification Number: 10.1109/JQE.2004.838530

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