Excess noise measurement in In0.53Ga0.47As

Goh, Y.L., Ng, J.S., Tan, C.H., Ng, W.K. and David, J.P.R. (2005) Excess noise measurement in In0.53Ga0.47As. IEEE Photonics Technology Letters, 17 (11). pp. 2412-2414. ISSN 1041-1135

Abstract

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Authors/Creators:
  • Goh, Y.L.
  • Ng, J.S.
  • Tan, C.H.
  • Ng, W.K.
  • David, J.P.R.
Copyright, Publisher and Additional Information: Copyright © 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: multiplication, Avalanche photodiodes, excess noise factor, impact ionization, ionization coefficients
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Sherpa Assistant
Date Deposited: 16 Dec 2005
Last Modified: 06 Jun 2014 09:15
Published Version: http://dx.doi.org/10.1109/LPT.2005.857239
Status: Published
Refereed: Yes
Identification Number: 10.1109/LPT.2005.857239

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