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Excess noise measurement in In0.53Ga0.47As

Goh, Y.L., Ng, J.S., Tan, C.H., Ng, W.K. and David, J.P.R. (2005) Excess noise measurement in In0.53Ga0.47As. IEEE Photonics Technology Letters, 17 (11). pp. 2412-2414. ISSN 1041-1135


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The excess noise due to impact ionization has been measured explicitly for the first time in In/sub 0.53/Ga/sub 0.47/As. By using a phase sensitive detection technique, the noise due to avalanche current was determined even in the presence of high tunneling currents. The excess noise due to pure electron injection measured on a series of thick In/sub 0.53/Ga/sub 0.47/As p/sup +/-i-n/sup +/ diodes suggests large electron to hole ionization coefficient ratio between 3.7 at electric field of 310 kV/spl middot/cm/sup -1/ to 5.3 at 260 kV/spl middot/cm/sup -1/. Excess noise was also measured at fields as low as 155 kV/spl middot/cm/sup -1/ suggesting that significant impact ionization occurs at these low fields. The multiplication and excess noise calculated using published ionization coefficients and ignoring dead space effects, gave good agreement with the experimental data for mixed and pure electron injection.

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: multiplication, Avalanche photodiodes, excess noise factor, impact ionization, ionization coefficients
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Sherpa Assistant
Date Deposited: 16 Dec 2005
Last Modified: 06 Jun 2014 09:15
Published Version: http://dx.doi.org/10.1109/LPT.2005.857239
Status: Published
Refereed: Yes
Identification Number: 10.1109/LPT.2005.857239
URI: http://eprints.whiterose.ac.uk/id/eprint/892

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