Tunable hot-carrier photodetection beyond the bandgap spectral limit

The spectral response of common optoelectronic photodetectors is restricted by a cutoff wavelength limit λ that is related to the activation energy (or bandgap) of the semiconductor structure (or material) (Δ) through the relationship λ = hc/Δ. This spectral rule dominates device design and intrinsically limits the long-wavelength response of a semiconductor photodetector. Here, we report a new, long-wavelength photodetection principle based on a hot-cold hole energy transfer mechanism that overcomes this spectral limit. Hot carriers injected into a semiconductor structure interact with cold carriers and excite them to higher energy states. This enables a very long-wavelength infrared response. In our experiments, we observe a response up to 55 μm, which is tunable by varying the degree of hot-hole injection, for a GaAs/AlGaAs sample with Δ = 0.32 eV (equivalent to 3.9 μm in wavelength).