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Avalanche noise characteristics of single Al/sub x/Ga/sub 1-x/As(0.3

Groves, C., Chia, C.K., Tozer, R.C., David, J.P.R. and Rees, G.J. (2005) Avalanche noise characteristics of single Al/sub x/Ga/sub 1-x/As(0.3. IEEE Journal of Quantum Electronics, 41 (1). pp. 70-75. ISSN 0018-9197

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Abstract

Avalanche multiplication and excess noise have been measured on a series of Al/sub x/Ga/sub 1-x/As-GaAs and GaAs-Al/sub x/Ga/sub 1-x/As (x=0.3,0.45, and 0.6) single heterojunction p/sup +/-i-n/sup +/ diodes. In some devices excess noise is lower than in equivalent homojunction devices with avalanche regions composed of either of the constituent materials, the heterojunction with x=0.3 showing the greatest improvement. Excess noise deteriorates with higher values of x because of the associated increase in hole ionization in the Al/sub x/Ga/sub 1-x/As layer. It also depends critically upon the carrier injection conditions and Monte Carlo simulations show that this dependence results from the variation in the degree of noisy feedback processes on the position of the injected carriers.

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: avalanche photodiodes (APDs), heterojunctions, impact ionization, noise
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Sherpa Assistant
Date Deposited: 25 Nov 2005
Last Modified: 09 Jun 2014 02:26
Status: Published
Refereed: Yes
Identification Number: 10.1109/JQE.2004.838530(410) 41
URI: http://eprints.whiterose.ac.uk/id/eprint/786

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