The nature of the hole states in Li doped NiO

Harding, John and Chen, Hungru (2012) The nature of the hole states in Li doped NiO. Physical Review B (PRB), 85 (11). p. 115127. ISSN 1098-0121

Abstract

Metadata

Authors/Creators:
  • Harding, John (j.harding@sheffield.ac.uk)
  • Chen, Hungru (mtp09hc@sheffield.ac.uk)
Copyright, Publisher and Additional Information: © 2012 American Physical Society. This is an author produced version of a paper subsequently published in Physical Review B. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: Li-doped NiO, ab initio simulation, transition metal oxides absorption, magnetic behaviour
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Materials Science and Engineering (Sheffield)
Funding Information:
FunderGrant number
EPSRCEP/G005001/1
EPSRCEP/F067496
Depositing User: Professor John Harding
Date Deposited: 13 Jun 2012 08:40
Last Modified: 08 Feb 2013 17:39
Published Version: http://dx.doi.org/10.1103/PhysRevB.85.115127
Status: Published
Publisher: American Physical Society
Refereed: Yes
Identification Number: https://doi.org/10.1103/PhysRevB.85.115127

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Filename: WRRO_73424.pdf

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