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Giant magnetoresistance induced by magnetic barriers

Kubrak, V., Edmonds, K.W., Neumann, A.C., Gallagher, B.L., Main, P.C., Henini, M., Marrows, C.H., Hickey, B.J. and Thoms, S. (2001) Giant magnetoresistance induced by magnetic barriers. IEEE Transactions on Magentics, 37 (4 (Pa). pp. 1992-1994. ISSN 0018-9464

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Abstract

We present experimental results for hybrid ferromagnet/semiconductor devices in which 2D electrons propagate through sub-micron width magnet barriers. Magnetoresistances, MR, of similar to ∼1000% are found at low temperatures and similar to ∼1% at room temperature. We compared the measured behavior with numerical calculations and give the conditions needed to achieve large room temperature MR.

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2001 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: magnetoresistive devices, semiconductor devices
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Maths and Physical Sciences (Leeds) > School of Physics and Astronomy (Leeds)
Depositing User: Sherpa Assistant
Date Deposited: 10 Oct 2005
Last Modified: 09 Jun 2014 14:26
Published Version: http://dx.doi.org/10.1109/20.951031
Status: Published
Refereed: Yes
Identification Number: 10.1109/20.951031
URI: http://eprints.whiterose.ac.uk/id/eprint/731

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