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Investigation into intermodulation distortion in HEMTs using a quasi-2-D physical model

Rudge, P.J., Miles, R.E., Steer, M.B. and Snowden, C.M. (2001) Investigation into intermodulation distortion in HEMTs using a quasi-2-D physical model. IEEE Transactions on Microwave Theory and Techniques, 49 (12). pp. 2315-2321. ISSN 0018-9480

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The need for both linear and efficient pseudomorphic high electron-mobility transistors (pHEMTs) for modern wireless handsets necessitates a thorough understanding of the origins of intermodulation distortion at the device level. For the first time, the dynamic large-signal internal physical behavior of a pHEMT is examined using a quasi-two-dimensional physical device model. The model accounts fully for device-circuit interaction and is validated experimentally for a two-tone experiment around 5 GHz.

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2001 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: intermodulation distortion, linearity, microwave power FET amplifiers, MODFET power amplifiers, MODFETs, semiconductor device modeling
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User: Sherpa Assistant
Date Deposited: 10 Oct 2005
Last Modified: 04 Jun 2014 11:59
Published Version: http://dx.doi.org/10.1109/22.971615
Status: Published
Refereed: Yes
Identification Number: 10.1109/22.971615
URI: http://eprints.whiterose.ac.uk/id/eprint/719

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