Perkins, E.W., Bonet, C. and Tear, S.P. (2005) Silicon overlayer growth on clean and hydrogen-terminated two-dimensional holmium silicide. Physical Review B, 72 (19). 195406-5 PAGES. ISSN 1550-235XFull text not available from this repository.
The growth of silicon overlayers on both two-dimensional (2D) holmium silicide and hydrogen-terminated 2D holmium silicide grown on Si(111) has been investigated using scanning tunneling microscopy (STM). In the nonhydrogen-terminated case, the surface is heavily islanded, exhibiting the 7×7 and 2×1 silicon reconstructions. Growth on the hydrogen-terminated surface differs substantially, being better ordered and less heavily islanded. Growth mechanisms are proposed to explain these observed differences. STM data are also presented from the hydrogen-terminated 2D holmium silicide surface.
|Institution:||The University of York|
|Academic Units:||The University of York > Physics (York)|
|Depositing User:||York RAE Import|
|Date Deposited:||26 Feb 2009 11:51|
|Last Modified:||26 Feb 2009 11:51|
|Publisher:||The American Physical Society.|