Silicon overlayer growth on clean and hydrogen-terminated two-dimensional holmium silicide

Perkins, E.W., Bonet, C. and Tear, S.P. (2005) Silicon overlayer growth on clean and hydrogen-terminated two-dimensional holmium silicide. Physical Review B, 72 (19). 195406-5 PAGES. ISSN 1550-235X

Abstract

Metadata

Authors/Creators:
  • Perkins, E.W.
  • Bonet, C.
  • Tear, S.P. (spt1@york.ac.uk)
Institution: The University of York
Academic Units: The University of York > Physics (York)
Depositing User: York RAE Import
Date Deposited: 26 Feb 2009 11:51
Last Modified: 26 Feb 2009 11:51
Published Version: http://dx.doi.org/10.1103/PhysRevB.72.195406
Status: Published
Publisher: The American Physical Society.
Identification Number: https://doi.org/10.1103/PhysRevB.72.195406

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