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Silicon overlayer growth on clean and hydrogen-terminated two-dimensional holmium silicide

Perkins, E.W., Bonet, C. and Tear, S.P. (2005) Silicon overlayer growth on clean and hydrogen-terminated two-dimensional holmium silicide. Physical Review B, 72 (19). 195406-5 PAGES. ISSN 1550-235X

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Abstract

The growth of silicon overlayers on both two-dimensional (2D) holmium silicide and hydrogen-terminated 2D holmium silicide grown on Si(111) has been investigated using scanning tunneling microscopy (STM). In the nonhydrogen-terminated case, the surface is heavily islanded, exhibiting the 7×7 and 2×1 silicon reconstructions. Growth on the hydrogen-terminated surface differs substantially, being better ordered and less heavily islanded. Growth mechanisms are proposed to explain these observed differences. STM data are also presented from the hydrogen-terminated 2D holmium silicide surface.

Item Type: Article
Academic Units: The University of York > Physics (York)
Depositing User: York RAE Import
Date Deposited: 26 Feb 2009 11:51
Last Modified: 26 Feb 2009 11:51
Published Version: http://dx.doi.org/10.1103/PhysRevB.72.195406
Status: Published
Publisher: The American Physical Society.
Identification Number: 10.1103/PhysRevB.72.195406
URI: http://eprints.whiterose.ac.uk/id/eprint/7188

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