Population-inversion and gain estimates for a semiconductor TASER

Harrison, P. and Soref, R.A. (2001) Population-inversion and gain estimates for a semiconductor TASER. IEEE Journal of Quantum Electronics, 37 (1). pp. 153-158. ISSN 0018-9197

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Abstract

We have investigated a solid-state design advanced (see Soref et al, in SPIE Proceedings, vol. 3795, p, 516, 1999) to achieve a terahertz-amplification-by-the-stimulated-emision-of-radiation (TASER), The original design was based on light-to heavy-hole intersubband transitions in SiGe/Si heterostructures, This work adapts the design to electron intersubband transitions in the more readily available GaAs/Ga1-xAlxAs material system. It is found that the electric-field induced anti-crossings of the states, derived from the first excited state with the ground states of a superlattice in the Stark-ladder regime, offers the possibility of a population inversion and gain at room temperature.

Item Type:	Article
Copyright, Publisher and Additional Information:	Copyright © 2001 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Academic Units:	The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User:	Sherpa Assistant
Date Deposited:	10 Oct 2005
Last Modified:	08 Feb 2013 17:02
Published Version:	http://dx.doi.org/10.1109/3.892737
Status:	Published
Refereed:	Yes
Identification Number:	10.1109/3.892737
URI:	http://eprints.whiterose.ac.uk/id/eprint/709

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