Harrison, P. and Soref, R.A. (2001) Population-inversion and gain estimates for a semiconductor TASER. IEEE Journal of Quantum Electronics, 37 (1). pp. 153-158. ISSN 0018-9197Full text available as:
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We have investigated a solid-state design advanced (see Soref et al, in SPIE Proceedings, vol. 3795, p, 516, 1999) to achieve a terahertz-amplification-by-the-stimulated-emision-of-radiation (TASER), The original design was based on light-to heavy-hole intersubband transitions in SiGe/Si heterostructures, This work adapts the design to electron intersubband transitions in the more readily available GaAs/Ga1-xAlxAs material system. It is found that the electric-field induced anti-crossings of the states, derived from the first excited state with the ground states of a superlattice in the Stark-ladder regime, offers the possibility of a population inversion and gain at room temperature.
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|Academic Units:||The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)|
|Depositing User:||Sherpa Assistant|
|Date Deposited:||10 Oct 2005|
|Last Modified:||08 Feb 2013 17:02|
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