Porter, NA and Marrows, CH (2012) Finite size suppression of the weak field magnetoresistance of lightly phosphorous-doped silicon. Journal of Applied Physics, 111. ISSN 0021-8979Full text available as:
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We report magnetoresistance measurements of lightly phosphorous doped silicon in samples that are fabricated from silicon-on-insulator wafers and so confined in one dimension. All three principal magnetic field orientations were studied at 50 and 270 K for thicknesses between 1.5−530 μm, and as thin as 150 nm at 270 K. The weak field magnetoresistance was suppressed in the orientations with the field in the sample plane when the sample is thinner than ∼1 μm at 270 K (∼10 μm at 50 K). This suppression occurred for samples that are much thicker than the carrier mean free path and the Debye screening length, and the relevant lengthscale is instead the energy relaxation length.
|Copyright, Publisher and Additional Information:||© 2012, American Institute of Physics. This is an author produced version of a paper published in Journal of Applied Phsyics. Uploaded in accordance with the publisher's self-archiving policy.|
|Academic Units:||The University of Leeds > Faculty of Maths and Physical Sciences (Leeds) > School of Physics and Astronomy (Leeds)|
|Depositing User:||Symplectic Publications|
|Date Deposited:||25 Apr 2012 11:10|
|Last Modified:||08 Feb 2013 17:37|
|Publisher:||American Institute of Physics|
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