AlAsSb avalanche photodiodes with a sub-mV/K temperature coefficient of breakdown voltage

Xie, S. and Tan, C.H. (2011) AlAsSb avalanche photodiodes with a sub-mV/K temperature coefficient of breakdown voltage. IEEE Journal of Quantum Electronics, 47 (11). pp. 1391-1395. ISSN 0018-9197

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Authors/Creators:
  • Xie, S.
  • Tan, C.H.
Copyright, Publisher and Additional Information: © 2011 IEEE-INST. This is an author produced version of a paper subsequently published in IEEE Journal of Quantum Electronics. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: AlAsSb; avalanche breakdown; avalanche photodiodes; impact ionization; temperature dependence of breakdown; tunneling
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Miss Anthea Tucker
Date Deposited: 28 Oct 2011 08:23
Last Modified: 08 Feb 2013 17:34
Published Version: http://dx.doi.org/10.1109/JQE.2011.2165051
Status: Published
Publisher: Institute of Electrical and Electronics Engineers
Identification Number: https://doi.org/10.1109/JQE.2011.2165051

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