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AlAsSb avalanche photodiodes with a sub-mV/K temperature coefficient of breakdown voltage

Xie, S. and Tan, C.H. (2011) AlAsSb avalanche photodiodes with a sub-mV/K temperature coefficient of breakdown voltage. IEEE Journal of Quantum Electronics, 47 (11). pp. 1391-1395. ISSN 0018-9197

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Abstract

The temperature dependence of dark current and avalanche gain were measured on AlAsSb p-i-n diodes with avalanche region widths of 80 and 230 nm. Measurements at temperatures ranging from 77 to 295 K showed that the dark current decreases rapidly with reducing temperature while avalanche gain exhibits a weak temperature dependence. No measurable band to band tunneling current was observed in the thinner diodes at an electric field of 1.07 MV/cm, corresponding to a bias of 95% of the breakdown voltage. Temperature coefficients of breakdown voltage of 0.95 and 1.47 mV/K were obtained from 80 and 230 nm diodes, respectively. These are significantly lower than a range of semiconductor materials with similar avalanche region widths. Our results demonstrated the potential of using thin AlAsSb avalanche regions to achieve low temperature coefficient of breakdown voltage without suffering from high band to band tunneling current.

Item Type: Article
Copyright, Publisher and Additional Information: © 2011 IEEE-INST. This is an author produced version of a paper subsequently published in IEEE Journal of Quantum Electronics. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: AlAsSb; avalanche breakdown; avalanche photodiodes; impact ionization; temperature dependence of breakdown; tunneling
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Miss Anthea Tucker
Date Deposited: 28 Oct 2011 08:23
Last Modified: 08 Feb 2013 17:34
Published Version: http://dx.doi.org/10.1109/JQE.2011.2165051
Status: Published
Publisher: Institute of Electrical and Electronics Engineers
Identification Number: 10.1109/JQE.2011.2165051
URI: http://eprints.whiterose.ac.uk/id/eprint/43356

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