Intervalley splitting and intersubband transitions in n-type Si/SiGe quantum wells: Pseudopotential vs. effective mass calculation

Valavanis, A, Ikonic, Z and Kelsall, RW (2007) Intervalley splitting and intersubband transitions in n-type Si/SiGe quantum wells: Pseudopotential vs. effective mass calculation. Physical Review B (Condensed Matter), 75 (20). pp.205332 . ISSN 0163-1829

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Authors/Creators:
  • Valavanis, A
  • Ikonic, Z
  • Kelsall, RW
Copyright, Publisher and Additional Information: © 2007 The American Physical Society. This is an author produced version of a paper published in Physical Review B. Uploaded in accordance with the publisher's self-archving policy.
Keywords: Quantum Wells, silicon, elemental semiconductors, Ge-Si alloys, semiconductor quantum wells, effective mass, conduction bands
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User: Dr Alexander Valavanis
Date Deposited: 15 Jun 2011 09:00
Last Modified: 16 Sep 2016 14:03
Published Version: http://link.aps.org/abstract/PRB/v75/e205332
Status: Published
Publisher: American Institute of Physics
Refereed: Yes

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Filename: IntervalleyMixing.pdf

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