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Material configurations for n-type silicon-based terahertz quantum cascade lasers

Valavanis, A, Dinh, TV, Lever, LJM, Ikonic, Z and Kelsall, RW (2011) Material configurations for n-type silicon-based terahertz quantum cascade lasers. Physical Review B. ISSN 1550-235X (In Press)

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Abstract

Silicon-based quantum cascade lasers (QCLs) offer the prospect of integrating coherent THz radiation sources with silicon microelectronics. Theoretical studies have proposed a variety of n-type SiGe-based heterostructures as design candidates, however the optimal material configuration remains unclear. In this work, an optimization algorithm is used to design equivalent THz QCLs in three recently-proposed configurations [(001) Ge/GeSi, (001) Si/SiGe and (111) Si/SiGe], with emission frequencies of 3 and 4\,THz. A systematic comparison of the electronic and optical properties is presented. A semi-classical electron transport simulation is used to model the charge carrier dynamics and calculate the peak gain, the corresponding current density and the maximum operating temperature. It is shown that (001) Ge/GeSi structures yield the best simulated performance at both emission frequencies.

Item Type: Article
Copyright, Publisher and Additional Information: © 2011 American Physical Society. This is an author produced version of a paper accepted for publication in Physical Review B. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: Silicon, germanium, SiGe, quantum cascade lasers, terahertz, intersubband transitions
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 09 May 2011 13:27
Last Modified: 08 Feb 2013 17:31
Published Version: http://prb.aps.org/
Status: In Press
Publisher: American Physical Society
Related URLs:
URI: http://eprints.whiterose.ac.uk/id/eprint/42940

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