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Design of Ge/SiGe quantum-confined Stark effect modulators for CMOS compatible photonics

Lever, L, Ikonic, Z, Valavanis, A and Kelsall, RW (2010) Design of Ge/SiGe quantum-confined Stark effect modulators for CMOS compatible photonics. In: Kubby, JA and Reed, GT, (eds.) Proceedings SPIE. Silicon Photonics V, San Francisco, California, USA. The International Society for Optical Engineering , San Francisco, California, USA , 76060Q - ? (9).


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A simulation technique for modeling optical absorption in Ge/SiGe multiple quantum well (MQW) heterostructures is described, based on a combined 6 × 6 k • p hole wave-function a one-band effective mass electron wavefunction calculation. Using this model, we employ strain engineering to target a specific applications-oriented wavelength, namely 1310 nm, and arrive at a design for a MQW structure to modulate light at this wavelength. The modal confinement in a proposed device is then found using finite-element modeling, and we estimate the performance of a proposed waveguide-integrated electroabsorption modulator.

Item Type: Proceedings Paper
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 09 Mar 2011 14:25
Last Modified: 08 Feb 2013 17:31
Published Version: http://dx.doi.org/10.1117/12.843223
Status: Published
Publisher: The International Society for Optical Engineering
Identification Number: 10.1117/12.843223
Related URLs:
URI: http://eprints.whiterose.ac.uk/id/eprint/42897

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