Lever, L, Ikonic, Z, Valavanis, A and Kelsall, RW (2010) Design of Ge/SiGe quantum-confined Stark effect modulators for CMOS compatible photonics. In: Kubby, JA and Reed, GT, (eds.) Proceedings SPIE. Silicon Photonics V, San Francisco, California, USA. The International Society for Optical Engineering , San Francisco, California, USA , 76060Q - ? (9).
 | There is a more recent version of this eprint available. Click here to view it. |
Abstract
A simulation technique for modeling optical absorption in Ge/SiGe multiple quantum well (MQW) heterostructures is described, based on a combined 6 × 6 k • p hole wave-function a one-band effective mass electron wavefunction calculation. Using this model, we employ strain engineering to target a specific applications-oriented wavelength, namely 1310 nm, and arrive at a design for a MQW structure to modulate light at this wavelength. The modal confinement in a proposed device is then found using finite-element modeling, and we estimate the performance of a proposed waveguide-integrated electroabsorption modulator.
| Item Type: | Proceedings Paper |
|---|---|
| Academic Units: | The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds) |
| Depositing User: | Symplectic Publications |
| Date Deposited: | 09 Mar 2011 14:25 |
| Last Modified: | 08 Feb 2013 17:31 |
| Published Version: | http://dx.doi.org/10.1117/12.843223 |
| Status: | Published |
| Publisher: | The International Society for Optical Engineering |
| Identification Number: | 10.1117/12.843223 |
| Related URLs: | |
| URI: | http://eprints.whiterose.ac.uk/id/eprint/42897 |
Available Versions of this Item
- Design of Ge/SiGe quantum-confined Stark effect modulators for CMOS compatible photonics. (deposited 09 Mar 2011 14:25) [Currently Displayed]
Actions (login required)
 |
View Item |
