Lever, L, Ikonic, Z, Valavanis, A and Kelsall, RW (2010) Design of Ge/SiGe quantum-confined Stark effect modulators for CMOS compatible photonics. In: Kubby, JA and Reed, GT, (eds.) Proceedings SPIE. Silicon Photonics V, San Francisco, California, USA. The International Society for Optical Engineering , San Francisco, California, USA , 76060Q - ? (9).
A simulation technique for modeling optical absorption in Ge/SiGe multiple quantum well (MQW) heterostructures is described, based on a combined 6 × 6 k • p hole wave-function a one-band effective mass electron wavefunction calculation. Using this model, we employ strain engineering to target a specific applications-oriented wavelength, namely 1310 nm, and arrive at a design for a MQW structure to modulate light at this wavelength. The modal confinement in a proposed device is then found using finite-element modeling, and we estimate the performance of a proposed waveguide-integrated electroabsorption modulator.
|Item Type:||Proceedings Paper|
|Academic Units:||The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)|
|Depositing User:||Symplectic Publications|
|Date Deposited:||09 Mar 2011 14:25|
|Last Modified:||08 Feb 2013 17:31|
|Publisher:||The International Society for Optical Engineering|
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- Design of Ge/SiGe quantum-confined Stark effect modulators for CMOS compatible photonics. (deposited 09 Mar 2011 14:25) [Currently Displayed]
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