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Impact ionization in InAs electron avalanche photodiodes

Marshall, A.R.J., David, J.P.R. and Tan, C.H. (2010) Impact ionization in InAs electron avalanche photodiodes. IEEE Transactions on Electron Devices, 57 (10). pp. 2631-2638. ISSN 0018-9383

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Abstract

A systematic study of impact ionization, avalanche multiplication, and excess noise in InAs diodes has been carried out, confirming that avalanche multiplication is dominated by the impact ionization of electrons. This results in highly desirable "electron avalanche photodiode" characteristics previously only demonstrated in HgCdTe diodes, which are discussed in detail. The suppression of excess noise by nonlocal effects, to levels below the local model minimum of F = 2, is explained. An electron ionization coefficient is calculated and shown to be capable of modeling the electron impact ionization, which differs characteristically from that in wider bandgap III-V materials.

Item Type: Article
Copyright, Publisher and Additional Information: © Copyright 2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: Avalanche photodiode (APD); electron avalanche photodiode (e-APD); impact ionization; InAs; ionization coefficient
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Miss Anthea Tucker
Date Deposited: 22 Nov 2010 10:04
Last Modified: 04 Jun 2014 14:18
Published Version: http://dx.doi.org/10.1109/TED.2010.2058330
Status: Published
Publisher: Institute of Electrical and Electronics Engineers
Refereed: Yes
Identification Number: 10.1109/TED.2010.2058330
URI: http://eprints.whiterose.ac.uk/id/eprint/42655

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