Impact ionization in InAs electron avalanche photodiodes

Marshall, A.R.J., David, J.P.R. and Tan, C.H. (2010) Impact ionization in InAs electron avalanche photodiodes. IEEE Transactions on Electron Devices, 57 (10). pp. 2631-2638. ISSN 0018-9383

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Authors/Creators:
  • Marshall, A.R.J.
  • David, J.P.R.
  • Tan, C.H.
Copyright, Publisher and Additional Information: © Copyright 2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: Avalanche photodiode (APD); electron avalanche photodiode (e-APD); impact ionization; InAs; ionization coefficient
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Miss Anthea Tucker
Date Deposited: 22 Nov 2010 10:04
Last Modified: 04 Jun 2014 14:18
Published Version: http://dx.doi.org/10.1109/TED.2010.2058330
Status: Published
Publisher: Institute of Electrical and Electronics Engineers
Refereed: Yes
Identification Number: https://doi.org/10.1109/TED.2010.2058330

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