Lever, L., Valavanis, A., Ikonic, Z. and Kelsall, R. W. (2008) Simulated [111] Si-SiGe terahertz quantum cascade laser. Applied Physics Letters, 92 (2). 021124. ISSN 1077-3118
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Published Version: http://dx.doi.org/10.1063/1.2836023
Abstract
The prospect of developing a silicon laser has long been an elusive goal, mainly due to the indirect band gap and large effective carrier masses. We present a design for a terahertz intersubband laser grown on the [111] crystal plane and simulate performance using a rate equation method including scattering due to alloy disorder, interface roughness, carrier-phonon and Coulombic interactions. We predict gain greater than 40 cm<sup>-</sup>1 and a threshold current density of 70 A/cm<sup>2</sup>.
| Item Type: | Article |
|---|---|
| Copyright, Publisher and Additional Information: | © 2008 American Institute of Physics. This is an author produced version of a paper published in Applied Physics Letters. Uploaded in accordance with the publisher's self-archiving policy. |
| Keywords: | current density, electron-phonon interactions, elemental semiconductors, Ge-Si alloys, interface roughness, quantum cascade lasers, silicon |
| Academic Units: | The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) |
| ID Code: | 3632 |
| Deposited By: | Mr Alexander Valavanis |
| Deposited On: | 15 Feb 2008 16:19 |
| Last Modified: | 15 Feb 2008 18:14 |
| Published Version: | http://dx.doi.org/10.1063/1.2836023 |
| Status: | Published |
| Publisher: | American Institute of Physics |
| Refereed: | Yes |
| Identification Number: | doi:10.1063/1.2836023 |
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