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Simulated [111] Si-SiGe terahertz quantum cascade laser

Lever, L., Valavanis, A., Ikonic, Z. and Kelsall, R. W. (2008) Simulated [111] Si-SiGe terahertz quantum cascade laser. Applied Physics Letters, 92 (2). 021124. ISSN 1077-3118

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Abstract

The prospect of developing a silicon laser has long been an elusive goal, mainly due to the indirect band gap and large effective carrier masses. We present a design for a terahertz intersubband laser grown on the [111] crystal plane and simulate performance using a rate equation method including scattering due to alloy disorder, interface roughness, carrier-phonon and Coulombic interactions. We predict gain greater than 40 cm<sup>-</sup>1 and a threshold current density of 70 A/cm<sup>2</sup>.

Item Type: Article
Copyright, Publisher and Additional Information: © 2008 American Institute of Physics. This is an author produced version of a paper published in Applied Physics Letters. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: current density, electron-phonon interactions, elemental semiconductors, Ge-Si alloys, interface roughness, quantum cascade lasers, silicon
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds)
Depositing User: Dr Alexander Valavanis
Date Deposited: 15 Feb 2008 16:19
Last Modified: 06 Jun 2014 13:02
Published Version: http://dx.doi.org/10.1063/1.2836023
Status: Published
Publisher: American Institute of Physics
Refereed: Yes
Identification Number: 10.1063/1.2836023
URI: http://eprints.whiterose.ac.uk/id/eprint/3632

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