Intervalley splitting and intersubband transitions in n-type Si/SiGe quantum wells: pseudopotential vs. effective mass calculation

Valavanis, A., Ikonic, Z. and Kelsall, R. W. (2007) Intervalley splitting and intersubband transitions in n-type Si/SiGe quantum wells: pseudopotential vs. effective mass calculation. Physical Review B, 75 (20). p. 205332. ISSN 1550-235x

Abstract

Metadata

Authors/Creators:
  • Valavanis, A. (a.valavanis05@leeds.ac.uk)
  • Ikonic, Z. (z.ikonic@leeds.ac.uk)
  • Kelsall, R. W. (r.w.kelsall@leeds.ac.uk)
Copyright, Publisher and Additional Information: © 2007 The American Physical Society. This is an author produced version of a paper published in Physical Review B. Uploaded in accordance with the publisher's self-archving policy.
Keywords: silicon, elemental semiconductors, Ge-Si alloys, semiconductor quantum wells, effective mass, conduction bands
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User: Dr Alexander Valavanis
Date Deposited: 15 Feb 2008 18:20
Last Modified: 21 Sep 2016 00:59
Published Version: http://link.aps.org/abstract/PRB/v75/e205332
Status: Published
Publisher: American Physical Society
Refereed: Yes
Identification Number: 10.1103/PhysRevB.75.205332

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