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Epitaxial growth and magnetic properties of half-metallic Fe3O4 on GaAs(100)

Lu, Y.X., Claydon, J.S., Xu, Y.B., Thompson, S.M., Wilson, K. and van der Laan, G. (2004) Epitaxial growth and magnetic properties of half-metallic Fe3O4 on GaAs(100). Physical Review B: Condensed Matter and Materials Physics, 70 (23). Art. No. 233304. ISSN 1550-235X

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The growth and magnetic properties of epitaxial magnetite Fe3O4 on GaAs(100) have been studied by reflection high-energy electron diffraction, x-ray photoelectron spectroscopy, magneto-optical Kerr effect, and x-ray magnetic circular dichroism. The epitaxial Fe3O4 films were synthesized by in situ post growth annealing of ultrathin epitaxial Fe films at 500 K in an oxygen partial pressure of 5×10(–5) mbar. The XMCD measurements show characteristic contributions from different sites of the ferrimagnetic magnetite unit cell, namely, Fetd(3+), Feoh(2+), and Feoh(3+). The epitaxial relationship was found to be Fe3O4(100)<011>//GaAs(100)<010> with the unit cell of Fe3O4 rotated by 45° to match that of GaAs(100) substrate. The films show a uniaxial magnetic anisotropy in a thickness range of about 2.0–6.0 nm with the easy axes along the [011] direction of the GaAs(100) substrate.

© 2004 The American Physical Society.

Item Type: Article
Copyright, Publisher and Additional Information: © 2001 The American Physical Society. Available from the author's web site (Associated URL field).
Institution: The University of York
Academic Units: The University of York > Electronics (York)
The University of York > Chemistry (York)
The University of York > Physics (York)
Depositing User: Repository Officer
Date Deposited: 08 Jan 2007
Last Modified: 05 Aug 2007 18:25
Published Version: http://link.aps.org/abstract/PRB/v70/e233304
Status: Published
Publisher: American Physical Society
Refereed: Yes
Identification Number: 10.1103/PhysRevB.70.233304
Related URLs:
URI: http://eprints.whiterose.ac.uk/id/eprint/1892

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