Lu, Y.X., Claydon, J.S., Xu, Y.B. et al. (3 more authors) (2004) Epitaxial growth and magnetic properties of half-metallic Fe3O4 on GaAs(100). Physical Review B: Condensed Matter and Materials Physics, 70 (23). Art. No. 233304. ISSN 1550-235X
The growth and magnetic properties of epitaxial magnetite Fe3O4 on GaAs(100) have been studied by reflection high-energy electron diffraction, x-ray photoelectron spectroscopy, magneto-optical Kerr effect, and x-ray magnetic circular dichroism. The epitaxial Fe3O4 films were synthesized by in situ post growth annealing of ultrathin epitaxial Fe films at 500 K in an oxygen partial pressure of 5×10(–5) mbar. The XMCD measurements show characteristic contributions from different sites of the ferrimagnetic magnetite unit cell, namely, Fetd(3+), Feoh(2+), and Feoh(3+). The epitaxial relationship was found to be Fe3O4(100)<011>//GaAs(100)<010> with the unit cell of Fe3O4 rotated by 45° to match that of GaAs(100) substrate. The films show a uniaxial magnetic anisotropy in a thickness range of about 2.0–6.0 nm with the easy axes along the  direction of the GaAs(100) substrate.
© 2004 The American Physical Society.
|Copyright, Publisher and Additional Information:||© 2001 The American Physical Society. Available from the author's web site (Associated URL field).|
|Institution:||The University of York|
|Academic Units:||The University of York > Electronics (York)
The University of York > Chemistry (York)
The University of York > Physics (York)
|Depositing User:||Repository Officer|
|Date Deposited:||08 Jan 2007|
|Last Modified:||05 Aug 2007 18:25|
|Publisher:||American Physical Society|