Xu, Y.B., Tselepi, M., Guertler, C.M., Vaz, C.A.F., Wastlbauer, G., Bland, J.A.C., Dudzik, E. and van der Laan, G. (2001) Giant enhancement of orbital moments and perpendicular anisotropy in epitaxial Fe/GaAs(100). Journal of Applied Physics, 89 (11). pp. 7156-7158. ISSN 1089-7550Full text not available from this repository.
The spin and orbital magnetic moments and the perpendicular magnetic anisotropy of 8 and 33 monolayer epitaxial bcc Fe films grown on GaAs(100)-4×6 have been measured using x-ray magnetic circular dichronism and polar magneto-optical Kerr effect. Both the films have approximately the same spin moments of about 2.0µB close to that of the bulk value. The ultrathin film shows a giant orbital moment enhancement of about 300% with respect to the bulk value and a perpendicular interface anisotropy field H/s(Fe-GaAs) of the order of –5×10(4) Oe. This may be partially due to an increased degree of localization of electronic states at the Fe/GaAs interface associated with the atomic scale interface structure. © 2001 American Institute of Physics.
|Copyright, Publisher and Additional Information:||© 2001 American Institute of Physics. Available from the author's web site (Associated URL field).|
|Institution:||The University of York|
|Academic Units:||The University of York > Electronics (York)|
|Depositing User:||Repository Officer|
|Date Deposited:||08 Jan 2007|
|Last Modified:||05 Aug 2007 18:25|
|Publisher:||American Institute of Physics|