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Patterning ferromagnetism in Ni80Fe20 films via Ga+ ion irradiation

Kaminsky, W. M., Jones, G.A.C., Patel, N.K., Booij, W.E., Blamire, M.G., Gardiner, S.M., Xu, Y.B. and Bland, J.A.C. (2001) Patterning ferromagnetism in Ni80Fe20 films via Ga+ ion irradiation. Applied Physics Letters, 78 (11). pp. 1589-1591. ISSN 0003-6951

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We demonstrate that focused Ga+ ion irradiation can comprehensively modify the ferromagnetic properties of Ni80Fe20 thin films. Magneto-optic Kerr effect measurements at room temperature and magnetoresistance measurements at temperatures between 1.5 and 270 K characterized the irradiation effects. Irradiation steadily reduced the films' room temperature coercivity, and a dose of 1.0×10(16) ions/cm(2) at 30 keV was found sufficient to cause a loss of ferromagnetism at room temperature in films of thickness up to 15.5 nm. In situ end-point detection and postirradiation atomic force microscopy confirmed that the sputtering which accompanied doses up to 1.0×10(16) ions/cm(2) did not compromise the protective caps on these Ni80Fe20 films. We therefore conclude that the modification of ferromagnetic properties occurred primarily because of direct Ga+ ion implantation. From these results, we speculate that focused Ga+ ion irradiation could be a convenient tool for the nanoscale patterning of magnetic properties in 3d transition metal thin films. © 2001 American Institute of Physics.

Item Type: Article
Copyright, Publisher and Additional Information: © 2001 American Institute of Physics. Available from the author's web site (Associated URL field).
Institution: The University of York
Academic Units: The University of York > Electronics (York)
Depositing User: Repository Officer
Date Deposited: 08 Jan 2007
Last Modified: 05 Aug 2007 18:25
Published Version: http://dx.doi.org/10.1063/1.1351519
Status: Published
Publisher: American Institute of Physics
Refereed: Yes
Identification Number: 10.1063/1.1351519
Related URLs:
URI: http://eprints.whiterose.ac.uk/id/eprint/1887

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