Xu, Y.B., Freedland, D.J., Tselepi, M. and Bland, J.A.C. (2000) Anisotropic lattice relaxation and uniaxial magnetic anisotropy in Fe/InAs(100)-4×2. Physical Review B: Condensed Matter and Materials Physics, 62 (2). pp. 1167-1170. ISSN 1550-235XFull text not available from this repository.
The magnetic anisotropy and the lattice relaxation of epitaxial Fe films grown on InAs(100)-4×2 at room temperature have been studied using in situ magneto-optical Kerr effect and reflection high-energy electron diffraction. The experimental results demonstrate that the symmetry breaking associated with the intrinsic atomic scale structure of the reconstructed semiconductor surface induces an in-plane anisotropic lattice relaxation and an in-plane uniaxial magnetic anisotropy in the ultrathin region. We propose that this is a general phenomenon in ferromagnetic/semiconductor heterostructures. © 2000 The American Physical Society.
|Copyright, Publisher and Additional Information:||© 2000 The American Physical Society. Available from the author's web site (Associated URL field).|
|Academic Units:||The University of York > Electronics (York)|
|Depositing User:||Repository Officer|
|Date Deposited:||08 Jan 2007|
|Last Modified:||05 Aug 2007 18:25|
|Publisher:||American Physical Society|
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