Xu, Y.B., Freedland, D.J., Tselepi, M. and Bland, J.A.C. (2000) Anisotropic lattice relaxation and uniaxial magnetic anisotropy in Fe/InAs(100)-4×2. Physical Review B: Condensed Matter and Materials Physics, 62 (2). pp. 1167-1170. ISSN 1550-235X
Full text not available from this repository.Abstract
The magnetic anisotropy and the lattice relaxation of epitaxial Fe films grown on InAs(100)-4×2 at room temperature have been studied using in situ magneto-optical Kerr effect and reflection high-energy electron diffraction. The experimental results demonstrate that the symmetry breaking associated with the intrinsic atomic scale structure of the reconstructed semiconductor surface induces an in-plane anisotropic lattice relaxation and an in-plane uniaxial magnetic anisotropy in the ultrathin region. We propose that this is a general phenomenon in ferromagnetic/semiconductor heterostructures. © 2000 The American Physical Society.
| Item Type: | Article |
|---|---|
| Copyright, Publisher and Additional Information: | © 2000 The American Physical Society. Available from the author's web site (Associated URL field). |
| Keywords: | |
| Academic Units: | The University of York > Electronics (York) |
| Depositing User: | Repository Officer |
| Date Deposited: | 08 Jan 2007 |
| Last Modified: | 05 Aug 2007 18:25 |
| Published Version: | http://link.aps.org/abstract/PRB/v62/p1167 |
| Status: | Published |
| Publisher: | American Physical Society |
| Refereed: | Yes |
| Identification Number: | 10.1103/PhysRevB.62.1167 |
| Related URLs: | |
| URI: | http://eprints.whiterose.ac.uk/id/eprint/1884 |
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