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Anisotropic lattice relaxation and uniaxial magnetic anisotropy in Fe/InAs(100)-4×2

Xu, Y.B., Freedland, D.J., Tselepi, M. and Bland, J.A.C. (2000) Anisotropic lattice relaxation and uniaxial magnetic anisotropy in Fe/InAs(100)-4×2. Physical Review B: Condensed Matter and Materials Physics, 62 (2). pp. 1167-1170. ISSN 1550-235X

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The magnetic anisotropy and the lattice relaxation of epitaxial Fe films grown on InAs(100)-4×2 at room temperature have been studied using in situ magneto-optical Kerr effect and reflection high-energy electron diffraction. The experimental results demonstrate that the symmetry breaking associated with the intrinsic atomic scale structure of the reconstructed semiconductor surface induces an in-plane anisotropic lattice relaxation and an in-plane uniaxial magnetic anisotropy in the ultrathin region. We propose that this is a general phenomenon in ferromagnetic/semiconductor heterostructures. © 2000 The American Physical Society.

Item Type: Article
Copyright, Publisher and Additional Information: © 2000 The American Physical Society. Available from the author's web site (Associated URL field).
Institution: The University of York
Academic Units: The University of York > Electronics (York)
Depositing User: Repository Officer
Date Deposited: 08 Jan 2007
Last Modified: 05 Aug 2007 18:25
Published Version: http://link.aps.org/abstract/PRB/v62/p1167
Status: Published
Publisher: American Physical Society
Refereed: Yes
Identification Number: 10.1103/PhysRevB.62.1167
Related URLs:
URI: http://eprints.whiterose.ac.uk/id/eprint/1884

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