Evaluation of silicon MOSFETs and GaN HEMTs in soft‐switched and hard‐switched DC‐DC boost converters for domestic PV applications

Ansari, S.A., Davidson, J.N. orcid.org/0000-0002-6576-3995 and Foster, M.P. orcid.org/0000-0002-8565-0541 (2021) Evaluation of silicon MOSFETs and GaN HEMTs in soft‐switched and hard‐switched DC‐DC boost converters for domestic PV applications. IET Power Electronics, 14 (5). pp. 1032-1043. ISSN 1755-4535

Abstract

Metadata

Authors/Creators:
Copyright, Publisher and Additional Information: © 2021 The Authors. IET Power Electronics published by John Wiley & Sons Ltd on behalf of The Institution of Engineering and Technology. This is an open access article under the terms of the Creative Commons Attribution License, (http://creativecommons.org/licenses/by/4.0/) which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
Dates:
  • Accepted: 21 January 2021
  • Published (online): 23 February 2021
  • Published: 24 March 2021
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 16 Mar 2021 17:12
Last Modified: 15 Feb 2022 14:42
Status: Published
Publisher: Institution of Engineering and Technology (IET)
Refereed: Yes
Identification Number: https://doi.org/10.1049/pel2.12085

Download

Export

Statistics