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Self-consistent energy balance simulations of hole dynamics in SiGe/Si THz quantum cascade structures

Ikonic, Z., Harrison, P. and Kelsall, R.W. (2004) Self-consistent energy balance simulations of hole dynamics in SiGe/Si THz quantum cascade structures. Journal of Applied Physics, 96 (11). pp. 6803-6811. ISSN 1089-7550

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Abstract

Analysis of hole transport in cascaded p-Si/SiGe quantum well structures is performed using self-consistent rate equations simulations. The hole subband structure is calculated using the 6×6 k·p model, and then used to find carrier relaxation rates due to the alloy disorder, acoustic, and optical phonon scattering, as well as hole-hole scattering. The simulation accounts for the in-plane k-space anisotropy of both the hole subband structure and the scattering rates. Results are presented for prototype THz Si/SiGe quantum cascade structures. © 2004 American Institute of Physics

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2004 American Institute of Physics. Reproduced in accordance with the publisher's self-archiving policy. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User: Repository Officer
Date Deposited: 02 Nov 2006
Last Modified: 08 Feb 2013 17:03
Published Version: http://dx.doi.org/10.1063/1.1805727
Status: Published
Publisher: American Institute of Physics
Refereed: Yes
Identification Number: 10.1063/1.1805727
URI: http://eprints.whiterose.ac.uk/id/eprint/1691

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