Acceptor binding energy in delta-doped GaAs/AlAs multiple-quantum wells

Zheng, W.M., Halsall, M.P., Harmer, P. et al. (2 more authors) (2002) Acceptor binding energy in delta-doped GaAs/AlAs multiple-quantum wells. Journal of Applied Physics, 92 (10). pp. 6039-6042. ISSN 1089-7550

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Authors/Creators:
  • Zheng, W.M.
  • Halsall, M.P.
  • Harmer, P.
  • Harrison, P.
  • Steer, M.J.
Copyright, Publisher and Additional Information: Copyright © 2002 American Institute of Physics. Reproduced in accordance with the publisher's self-archiving policy. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Institution: The University of Sheffield, The University of Leeds
Academic Units: The University of Sheffield > University of Sheffield Research Centres and Institutes > EPSRC National Centre for III-V Technologies (Sheffield)
The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User: Repository Officer
Date Deposited: 02 Nov 2006
Last Modified: 25 Oct 2016 03:13
Published Version: http://dx.doi.org/10.1063/1.1516872
Status: Published
Publisher: American Institute of Physics
Refereed: Yes
Identification Number: https://doi.org/10.1063/1.1516872

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