Zheng, W.M., Halsall, M.P., Harmer, P., Harrison, P. and Steer, M.J. (2002) Acceptor binding energy in delta-doped GaAs/AlAs multiple-quantum wells. Journal of Applied Physics, 92 (10). pp. 6039-6042. ISSN 1089-7550Full text available as:
Available under licence : See the attached licence file.
A series of Be delta-doped GaAs/AlAs multiple-quantum wells with the doping at the well center were grown by molecular beam epitaxy. The photoluminescence spectra were measured at 4, 20, 40, 80, 120, and 200 K, respectively. The two-hole transitions of the acceptor-bound exciton from the ground state, 1S3/2(Gamma(6)), to the first-excited state, 2S3/2(Gamma(6)), have been clearly observed and the acceptor binding energy measured. A variational calculation is presented to obtain the acceptor binding energy as a function of well width. It is found that the experimental results are in good agreement with the theory. © 2002 American Institute of Physics.
|Copyright, Publisher and Additional Information:||Copyright © 2002 American Institute of Physics. Reproduced in accordance with the publisher's self-archiving policy. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.|
|Institution:||The University of Sheffield, The University of Leeds|
|Academic Units:||The University of Sheffield > University of Sheffield Research Centres and Institutes > EPSRC National Centre for III-V Technologies (Sheffield)
The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
|Depositing User:||Repository Officer|
|Date Deposited:||02 Nov 2006|
|Last Modified:||06 Jun 2014 18:34|
|Publisher:||American Institute of Physics|
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