The structural dependence of the effective mass and Luttinger parameters in semiconductor quantum wells

Long, F., Hagston, W.E., Harrison, P. and Stirner, T. (1997) The structural dependence of the effective mass and Luttinger parameters in semiconductor quantum wells. Journal of Applied Physics, 82 (7). pp. 3414-3421. ISSN 1089-7550

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Published Version: http://dx.doi.org/10.1063/1.365657

Abstract

A detailed comparison of the empirical pseudopotential method with single and multiple band calculations based on the envelope function and effective mass approximations are presented. It is shown that, in order to give agreement with the more rigorous microscopic approach of the pseudopotential method, structural dependent effective masses and Luttinger parameters must be invoked. The CdTe/Cd(1 – x)Mn(x)Te system has been employed as an example, and the first pseudopotential calculations of quantum wells and superlattices in this material are presented. It is shown that the electron, light- and heavy-hole effective masses tend towards twice their bulk values in the limit of narrow quantum wells. © 1997 American Institute of Physics.

Item Type:	Article
Copyright, Publisher and Additional Information:	Copyright © 1997 American Institute of Physics. Reproduced in accordance with the publisher's self-archiving policy. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Academic Units:	The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User:	Repository Officer
Date Deposited:	01 Nov 2006
Last Modified:	08 Feb 2013 17:02
Published Version:	http://dx.doi.org/10.1063/1.365657
Status:	Published
Publisher:	American Institute of Physics
Refereed:	Yes
Identification Number:	10.1063/1.365657
URI:	http://eprints.whiterose.ac.uk/id/eprint/1677

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