Harrison, P. and Kelsall, R.W. (1997) Population inversion in optically pumped asymmetric quantum well terahertz lasers. Journal of Applied Physics, 81 (11). pp. 7135-7140. ISSN 1089-7550Full text available as:
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Intersubband carrier lifetimes and population ratios are calculated for three- and four-level optically pumped terahertz laser structures. Laser operation is based on intersubband transitions between the conduction band states of asymmetric GaAs-Ga(1 – x)Al(x)As quantum wells. It is shown that the carrier lifetimes in three-level systems fulfill the necessary conditions for stimulated emission only at temperatures below 200 K. The addition of a fourth level, however, enables fast depopulation of the lower laser level by resonant longitudinal optical phonon emission and thus offers potential for room temperature laser operation. © 1997 American Institute of Physics.
|Copyright, Publisher and Additional Information:||Copyright © 1997 American Institute of Physics. Reproduced in accordance with the publisher's self-archiving policy. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.|
|Institution:||The University of Leeds|
|Academic Units:||The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)|
|Depositing User:||Repository Officer|
|Date Deposited:||01 Nov 2006|
|Last Modified:||05 Jun 2014 23:51|
|Publisher:||American Institute of Physics|
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