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Population inversion in optically pumped asymmetric quantum well terahertz lasers

Harrison, P. and Kelsall, R.W. (1997) Population inversion in optically pumped asymmetric quantum well terahertz lasers. Journal of Applied Physics, 81 (11). pp. 7135-7140. ISSN 1089-7550

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Abstract

Intersubband carrier lifetimes and population ratios are calculated for three- and four-level optically pumped terahertz laser structures. Laser operation is based on intersubband transitions between the conduction band states of asymmetric GaAs-Ga(1 – x)Al(x)As quantum wells. It is shown that the carrier lifetimes in three-level systems fulfill the necessary conditions for stimulated emission only at temperatures below 200 K. The addition of a fourth level, however, enables fast depopulation of the lower laser level by resonant longitudinal optical phonon emission and thus offers potential for room temperature laser operation. © 1997 American Institute of Physics.

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 1997 American Institute of Physics. Reproduced in accordance with the publisher's self-archiving policy. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User: Repository Officer
Date Deposited: 01 Nov 2006
Last Modified: 05 Jun 2014 23:51
Published Version: http://dx.doi.org/10.1063/1.365310
Status: Published
Publisher: American Institute of Physics
Refereed: Yes
Identification Number: 10.1063/1.365310
URI: http://eprints.whiterose.ac.uk/id/eprint/1676

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