3-D scaling rules for high voltage planar clustered IGBTs

In this paper, an approach for design optimization of high voltage (≥ 3300 V) planar Clustered IGBT (CIGBT) is proposed and investigated through TCAD simulations. New 3-D scaling rules are employed in this approach to improve the electrical characteristics and widen the safe operating area. As shown in the simulation results, a scaled 4.5 kV field-stop CIGBT can achieve an on-state voltage drop of 1.78 V at Tj = 300 K and Jc = 50 A/cm2, mainly due to the enhancement of inherent thyristor action. High levels of turn-off robustness are maintained by the scaled CIGBTs. In addition, the scaling rules also result in improved short-circuit robustness due to control of current saturation levels. Furthermore, by integrating the 3-D scaling rules with the trench CIGBTs, the on-state performance shows significant improvement compared to the state-of-the-art IGBT technologies. Therefore, scaling rules on CIGBTs is a highly promising approach for enhancing the converter efficiency in medium and high voltage applications.