Preferred growth direction of III-V nanowires on differently oriented Si substrates

One of the nanowire characteristics is its preferred elongation direction. Here, we investigated the impact of Si substrate crystal orientation on the growth direction of GaAs nanowires. We first studied the self-catalyzed GaAs nanowire growth on Si (111) and Si (001) substrates. SEM observations show GaAs nanowires on Si (001) are grown along four <111> directions without preference on one or some of them. This non-preferential nanowire growth on Si (001) is morphologically in contrast to the extensively reported vertical <111> preferred GaAs nanowire growth on Si (111) substrates. We propose a model based on the initial condition of an ideal Ga droplet formation on Si substrates and the surface free energy calculation which takes into account the dangling bond surface density for different facets. This model provides further understanding of the different preferences in the growth of GaAs nanowires along selected <111> directions depending on the Si substrate orientation. To verify the prevalence of the model, nanowires were grown on Si (311) substrates. The results are in good agreement with the three-dimensional mapping of surface free energy by our model. This general model can also be applied to predictions of nanowire preferred growth directions by the vapor-liquid-solid growth mode on other group IV and III-V substrates.