Correlating compositional, structural and optical properties of InGaN quantum wells by transmission electron microscopy

Albrecht, M., Grillo, V., Borysiuk, J. et al. (8 more authors) (2001) Correlating compositional, structural and optical properties of InGaN quantum wells by transmission electron microscopy. In: Cullis, A.G. and Hutchison, J.L., (eds.) Microscopy of Semiconducting Materials 2001. The 12th Conference on the Microscopy of Semiconducting Materials (MSM), 25-29 Mar 2001, Oxford, UK. IOP Publishing Ltd (print) / CRC Press (eBook) , pp. 267-272. ISBN 9781351074629

Abstract

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Authors/Creators:
Copyright, Publisher and Additional Information: © 2001 IOP Publishing Ltd.
Keywords: localized excitons; band-gap; recombination; interfaces; alloys; images
Dates:
  • Published (online): 18 January 2018
  • Published: March 2001
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 30 Apr 2020 08:01
Last Modified: 30 Apr 2020 08:01
Published Version: https://www.taylorfrancis.com/books/e/978135107462...
Status: Published
Publisher: IOP Publishing Ltd (print) / CRC Press (eBook)
Refereed: Yes
Identification Number: https://doi.org/10.1201/9781351074629

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