Cai, Y. orcid.org/0000-0002-2004-0881, Yu, X., Shen, S. et al. (5 more authors) (2019) Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method. Semiconductor Science and Technology, 34 (4). 045012. ISSN 0268-1242
Abstract
A two-step approach has been developed for the growth of semi-polar (11–22) GaN on patterned (113) silicon substrates, which effectively eliminates Ga melt-back etching at a high temperature, one of the most challenging issues. A (113) Si substrate is patterned into groove trenches by means of using a standard photolithography technique and then anisotropic chemical etching, forming (111) facets with an inclination angle of 58˚ with respect to c-axis in addition to the un-etched (113) facets. A thick AlN layer is subsequently epitaxially grown on the patterned silicon to cover all the facets ensuring to eliminate the melt-back, followed by selectively depositing SiO2 masks on the (113) facets only. Further GaN overgrowth is performed only on the exposed (111) facets, forming (11–22) semi-polar GaN with high crystal quality along the vertical direction. Stimulated emission at room temperature has been observed with a low threshold. Low-temperature photoluminescence measurements confirm a significant reduction in basal stacking faults density. This method provides a promising approach to effectively suppress the Ga melt-back etching issue, which is particularly important for Al(Ga)N growth on semi-polar GaN that requires a high growth temperature. The presented results are crucially important for developing monolithic on-chip integration of electronics and photonics on silicon.
Metadata
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Copyright, Publisher and Additional Information: | © 2019 IOP Publishing Ltd. | ||||
Keywords: | semipolar; silicon substrate; GaN; MOVPE | ||||
Dates: |
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Institution: | The University of Sheffield | ||||
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) | ||||
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Depositing User: | Symplectic Sheffield | ||||
Date Deposited: | 06 Apr 2020 13:30 | ||||
Last Modified: | 06 Apr 2020 13:30 | ||||
Status: | Published | ||||
Publisher: | IOP Publishing | ||||
Refereed: | Yes | ||||
Identification Number: | https://doi.org/10.1088/1361-6641/ab08bf | ||||
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