A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques

Sharpe, M.K., Marko, I.P., Duffy, D.A. et al. (7 more authors) (2019) A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques. Journal of Applied Physics, 126 (12). 125706. ISSN 0021-8979

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Authors/Creators:
Copyright, Publisher and Additional Information: © 2019 AIP Publishing. Reproduced in accordance with the publisher's self-archiving policy.
Dates:
  • Accepted: 1 September 2019
  • Published (online): 26 September 2019
  • Published: 26 September 2019
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 07 Nov 2019 14:01
Last Modified: 07 Nov 2019 14:01
Status: Published
Publisher: AIP Publishing
Refereed: Yes
Identification Number: https://doi.org/10.1063/1.5109653
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