An ultralow power 3-terminal memory device with write capability in the off-state

Song, X., Kumar, A. and De Souza, M.M. orcid.org/0000-0002-7804-7154 (2019) An ultralow power 3-terminal memory device with write capability in the off-state. In: Proceedings of the 3rd Electron Devices Technology and Manufacturing Conference. 3rd Electron Devices Technology and Manufacturing Conference, 13-15 Mar 2019, Singapore, Singapore. IEEE . ISBN 9781538665084

Abstract

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Authors/Creators:
Copyright, Publisher and Additional Information: © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Reproduced in accordance with the publisher's self-archiving policy.
Keywords: Tantalum oxide; zinc oxide; oxygen vacancies; memory TFTs and compute-in-memory
Dates:
  • Accepted: 7 December 2018
  • Published (online): 6 June 2019
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ENIAC296131-1
Depositing User: Symplectic Sheffield
Date Deposited: 15 May 2019 12:10
Last Modified: 25 Jul 2019 14:28
Status: Published online
Publisher: IEEE
Refereed: Yes
Identification Number: https://doi.org/10.1109/EDTM.2019.8731277

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