Light-biased IV characteristics of a GaAsBi/GaAs multiple quantum well pin diode at low temperature

Richards, R.D. orcid.org/0000-0001-7043-8372, Rockett, T.B.O., Nawawi, M.R.M. et al. (6 more authors) (2018) Light-biased IV characteristics of a GaAsBi/GaAs multiple quantum well pin diode at low temperature. Semiconductor Science and Technology, 33 (9). 094008. ISSN 0268-1242

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Copyright, Publisher and Additional Information: © 2018 IOP Publishing Ltd. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. https://creativecommons.org/licenses/by/3.0/
Keywords: GaAsBi; GaBiAs; p-i-n diodes; multiple quantum well
Dates:
  • Accepted: 31 July 2018
  • Published (online): 20 August 2018
  • Published: 20 August 2018
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 15 May 2019 09:04
Last Modified: 15 May 2019 09:04
Status: Published
Publisher: IOP Publishing
Refereed: Yes
Identification Number: https://doi.org/10.1088/1361-6641/aad72a
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