Lateral charge spreading and device-to-device coupling in C-doped AlGaN/GaN-on-Si wafers

Singh, M., Karboyan, S., Uren, M.J. et al. (4 more authors) (2019) Lateral charge spreading and device-to-device coupling in C-doped AlGaN/GaN-on-Si wafers. Microelectronics Reliability, 95. pp. 81-86. ISSN 0026-2714

Abstract

Metadata

Authors/Creators:
Copyright, Publisher and Additional Information: © 2019 Elsevier.
Keywords: GaN HEMT; Carbon doping; Lateral charge transport; Device-to-device coupling; Dynamic RON; Wafer level reliability
Dates:
  • Accepted: 28 February 2019
  • Published (online): 15 March 2019
  • Published: April 2019
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 10 Apr 2019 10:04
Last Modified: 10 Apr 2019 10:04
Status: Published
Publisher: Elsevier
Refereed: Yes
Identification Number: https://doi.org/10.1016/j.microrel.2019.02.012

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