Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1-xN Layers

Cai, Y. orcid.org/0000-0002-2004-0881, Zhu, C., Jiu, L. et al. (5 more authors) (2018) Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1-xN Layers. Materials, 11 (10). 1968. ISSN 1996-1944

Abstract

Metadata

Authors/Creators:
Copyright, Publisher and Additional Information: © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Keywords: HEMTs; strain; AlxGa1-xN; crack-free; silicon
Dates:
  • Accepted: 10 October 2018
  • Published: 13 October 2018
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 14 Mar 2019 12:44
Last Modified: 14 Mar 2019 15:58
Status: Published
Publisher: MDPI
Refereed: Yes
Identification Number: https://doi.org/10.3390/ma11101968
Related URLs:

Share / Export

Statistics