Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers

Choi, F.S., Griffiths, J.T., Ren, C. et al. (7 more authors) (2018) Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers. Journal of Applied Physics, 124 (5). 055702. ISSN 0021-8979

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Copyright, Publisher and Additional Information: © Author(s) 2018. All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Dates:
  • Accepted: 18 July 2018
  • Published (online): 3 August 2018
  • Published: 7 August 2018
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 10 Aug 2018 08:44
Last Modified: 10 Aug 2018 08:44
Published Version: https://doi.org/10.1063/1.5027680
Status: Published
Publisher: AIP Publishing
Refereed: Yes
Identification Number: https://doi.org/10.1063/1.5027680

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