A novel approach to suppress the collector induced barrier lowering (CIBL) effect in narrow mesa IGBTs

A recessed p+-cathode IGBT (RP-IGBT) structure with very narrow mesa is analysed through 3-D simulations in 1.2-kV, field stop technology. Compared to a conventional narrow mesa IGBTs, the RP-IGBT can effectively restrain the collector- induced barrier lowering (CIBL) effect and hence, two-thirds reduction in saturation current can be achieved. As a result, more than 10μs short circuit capability is enabled at a junction temperature of 400K. Most importantly, the proposed RP-IGBT structure has no influence upon on-state performance and its forward voltage drop remains at 1.1V at a current density of 200A/cm2 at 400K.