A novel approach to suppress the collector induced barrier lowering (CIBL) effect in narrow mesa IGBTs

Luo, P., Long, H.Y. and Madathil, S.N. orcid.org/0000-0001-6832-1300 (2018) A novel approach to suppress the collector induced barrier lowering (CIBL) effect in narrow mesa IGBTs. IEEE Electron Device Letters. ISSN 0741-3106

Abstract

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Authors/Creators:
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Keywords: IGBT; RP-IGBT; recessed p+_cathode; narrow mesa; collector induced barrier lowering (CIBL); short circuit capability
Dates:
  • Accepted: 5 July 2018
  • Published (online): 9 July 2018
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 11 Jul 2018 13:36
Last Modified: 21 Aug 2018 09:55
Published Version: https://doi.org/10.1109/LED.2018.2854363
Status: Published online
Publisher: Institute of Electrical and Electronics Engineers
Refereed: Yes
Identification Number: https://doi.org/10.1109/LED.2018.2854363

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