Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

Zaidi, Z.H., Lee, K.B. orcid.org/0000-0002-5374-2767, Roberts, J.W. et al. (9 more authors) (2018) Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. Journal of Applied Physics , 123 (18). 184503. ISSN 0021-8979

Abstract

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Authors/Creators:
Copyright, Publisher and Additional Information: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Zaidi, Z.H., Lee, K.B. , Roberts, J.W. et al. (9 more authors) (2018) Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. Journal of Applied Physics , 123 (18). 184503. ISSN 0021-8979 and may be found at https://doi.org/10.1063/1.5027822.
Dates:
  • Published: 14 May 2018
  • Accepted: 25 April 2018
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC)EP/N015878/1
Depositing User: Symplectic Sheffield
Date Deposited: 31 May 2018 09:27
Last Modified: 31 May 2018 09:36
Published Version: https://doi.org/10.1063/1.5027822
Status: Published
Publisher: AIP Publishing
Refereed: Yes
Identification Number: https://doi.org/10.1063/1.5027822
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