Analysis of Bi Distribution in Epitaxial GaAsBi by aberration-corrected HAADF-STEM

Balades, N., Sales, D.L., Herrera, M. et al. (4 more authors) (2018) Analysis of Bi Distribution in Epitaxial GaAsBi by aberration-corrected HAADF-STEM. Nanoscale Research Letters, 13. 125. ISSN 1931-7573

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Copyright, Publisher and Additional Information: © The Author(s). 2018 Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
Keywords: GaAsBi; Ac-HAADF-STEM; Bi-clusters
Dates:
  • Published: 25 April 2018
  • Accepted: 16 April 2018
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ROYAL ACADEMY OF ENGINEERING (THE)RF/1516/15/43
Depositing User: Symplectic Sheffield
Date Deposited: 14 May 2018 15:44
Last Modified: 15 May 2018 06:55
Published Version: https://doi.org/10.1186/s11671-018-2530-5
Status: Published
Publisher: SpringerOpen
Refereed: Yes
Identification Number: https://doi.org/10.1186/s11671-018-2530-5
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