Impact of channel thickness on the performance of an E-mode p-channel MOSHFET in GaN

Kumar, A. and De Souza, M.M. orcid.org/0000-0002-7804-7154 (2018) Impact of channel thickness on the performance of an E-mode p-channel MOSHFET in GaN. Applied Physics Letters, 112 (15). 153503. ISSN 0003-6951

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Copyright, Publisher and Additional Information: © 2018 AIP Publishing. This is an author produced version of a paper subsequently published in Applied Physics Letters. Uploaded in accordance with the publisher's self-archiving policy.
Dates:
  • Accepted: 30 March 2018
  • Published (online): 11 April 2018
  • Published: 11 April 2018
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ENIAC296131-1
Depositing User: Symplectic Sheffield
Date Deposited: 12 Apr 2018 10:55
Last Modified: 11 Apr 2019 00:43
Published Version: https://doi.org/10.1063/1.5021306
Status: Published
Publisher: AIP Publishing
Refereed: Yes
Identification Number: https://doi.org/10.1063/1.5021306

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