Stranski-Krastanow growth of (Si)Ge/Si(001): transmission electron microscopy compared with segregation theory

Norris, D.J. and Walther, T. orcid.org/0000-0003-3571-6263 (2018) Stranski-Krastanow growth of (Si)Ge/Si(001): transmission electron microscopy compared with segregation theory. Materials Science and Technology. ISSN 0267-0836

Abstract

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Authors/Creators:
Copyright, Publisher and Additional Information: This is an Accepted Manuscript of an article published by Taylor & Francis in Materials Science and Technology on 02 Apr 2018, available online: https://doi.org/10.1080/02670836.2018.1455013.
Keywords: Stranski–Krastanov; islanding; SiGe; TEM; segregation; three-state exchange model
Dates:
  • Published (online): 2 April 2018
  • Accepted: 16 March 2018
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC)EP/F033893/1
Depositing User: Symplectic Sheffield
Date Deposited: 09 Apr 2018 11:23
Last Modified: 02 Apr 2019 00:38
Published Version: https://doi.org/10.1080/02670836.2018.1455013
Status: Published online
Publisher: Taylor & Francis
Refereed: Yes
Identification Number: https://doi.org/10.1080/02670836.2018.1455013

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