Stranski-Krastanow growth of (Si)Ge/Si(001): transmission electron microscopy compared with segregation theory

We performed transmission electron microscopy of SiGe/Si(001) and Ge/Si(001) samples that undergo the Stranski–Krastanov transition from flat layer to island growth. With the help of quantitative X-ray maps of those layers, we have determined the total amount of deposited germanium at which islanding commences. The maximum amount of Ge buried in a flat layer amounts to 2.3 monolayers. We show by modelling that it is the strain due to the total amount of Ge atoms deposited that drives the islanding process. At 600°C [400°C], 1.62 [1.74] monolayers of Ge are expected from simulations to segregate towards the surface, the strain of which is sufficient to trigger plastic relaxation by islanding, in agreement with our electron microscope observations.