Ghasemi, Arsham, Kepaptsoglou, Demie orcid.org/0000-0003-0499-0470, Galindo, Pedro L. et al. (3 more authors) (2017) Van der Waals epitaxy between the highly lattice mismatched Cu-doped FeSe and Bi2Te3. NPG Asia Materials. e402. ISSN 1884-4057
Abstract
We present a structural and density functional theory study of FexCu1-xSe within the three-dimensional topological insulator Bi2Te3. The FexCu1-xSe inclusions are single-crystalline and epitaxially oriented with respect to the Bi2Te3 thin film. Aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy show an atomically sharp FeICu1-xSe/Bi2Te3 interface. The FexCu1-xSe/Bi2Te3 interface is determined by Se-Te bonds and no misfit dislocations are observed, despite the different lattice symmetries and large lattice mismatch of [sim]19%. First-principle calculations show that the large strain at the FexCu1-xSe/Bi2Te3 interface can be accommodated by van der Waals-like bonding between Se and Te atoms.
Metadata
Authors/Creators: |
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Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Physics (York) |
Depositing User: | Pure (York) |
Date Deposited: | 23 Jan 2018 10:20 |
Last Modified: | 21 Jan 2021 15:54 |
Published Version: | https://doi.org/10.1038/am.2017.111 |
Status: | Published online |
Refereed: | Yes |
Identification Number: | https://doi.org/10.1038/am.2017.111 |
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Description: Van der Waals epitaxy between the highly lattice mismatched Cu-doped FeSe and Bi2Te3