Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

Tang, F.Z., Lee, K. orcid.org/0000-0002-5374-2767, Guiney, I. et al. (11 more authors) (2018) Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors. Journal of Applied Physics, 123 (2). 024902. ISSN 0021-8979

Abstract

Metadata

Authors/Creators:
  • Tang, F.Z.
  • Lee, K. https://orcid.org/0000-0002-5374-2767
  • Guiney, I.
  • Frentup, M.
  • Barnard, J.S.
  • Divitini, G.
  • Zaidi, Z.
  • Martin, T.L.
  • Bagot, P.
  • Moody, M.P.
  • Humphreys, C.J.
  • Houston, P.A.
  • Oliver, R.A.
  • Wallis, D.J.
Copyright, Publisher and Additional Information: © 2018 The Authors. This is an author produced version of a paper subsequently published in Journal of Applied Physics. Uploaded in accordance with the publisher's self-archiving policy.
Dates:
  • Accepted: 15 December 2017
  • Published (online): 9 January 2018
  • Published: 14 January 2018
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC)UNSPECIFIED
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC)EP/K014471/1
Depositing User: Symplectic Sheffield
Date Deposited: 19 Jan 2018 14:58
Last Modified: 19 Jan 2018 15:07
Published Version: https://doi.org/10.1063/1.5006255
Status: Published
Publisher: AIP Publishing
Refereed: Yes
Identification Number: https://doi.org/10.1063/1.5006255

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