Comparison of cross-sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers

Norris, D.J., Myronov, M., Leadley, D.R. et al. (1 more author) (2017) Comparison of cross-sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers. Journal of Microscopy, 268 (3). pp. 288-297. ISSN 0022-2720

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Copyright, Publisher and Additional Information: © 2017 The Authors. This is an author produced version of a paper subsequently published in Journal of Microscopy. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: Germanium-on-silicon (Ge/Si); islanding; transmission electron microscopy
Dates:
  • Published: 20 November 2017
  • Published (online): 3 October 2017
  • Accepted: 12 September 2017
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 01 Dec 2017 12:03
Last Modified: 03 Oct 2018 00:39
Published Version: https://doi.org/10.1111/jmi.12654
Status: Published
Publisher: Wiley
Refereed: Yes
Identification Number: https://doi.org/10.1111/jmi.12654
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