| Authors/Creators: |
|
| Copyright, Publisher and Additional Information: |
© Institution of Engineering and Technology. This is an author produced version of a paper subsequently published in IET Power Electronics. Uploaded in accordance with the publisher's self-archiving policy. |
| Keywords: |
gallium compounds; III-V semiconductors; wide band gap semiconductors; aluminium compounds; MOSFET; two-dimensional hole gas; technology CAD (electronics);
threshold voltage modelling; p-channel enhancement-mode heterostructure field-effect transistor; p-channel metal-oxide-semiconductor heterostructure field-effect transistor; polarisation induced two-dimensional hole gas; depletion mode; TCAD simulation; AlGaN-GaN-AlGaN-GaN |
| Dates: |
- Accepted: 30 October 2017
- Published (online): 1 April 2018
- Published: April 2018
|
| Institution: |
The University of Sheffield |
| Academic Units: |
The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
| Depositing User: |
Symplectic Sheffield |
| Date Deposited: |
27 Nov 2017 15:11 |
| Last Modified: |
14 Dec 2023 12:43 |
| Status: |
Published |
| Publisher: |
Institution of Engineering and Technology |
| Refereed: |
Yes |
| Identification Number: |
https://doi.org/10.1049/iet-pel.2017.0438 |
CORE (COnnecting REpositories)
CORE (COnnecting REpositories)