Modelling the Threshold Voltage for p-channel E-mode GaN HFETs

Kumar, A. orcid.org/0000-0002-8288-6401 and De Souza, M.M. (2017) Modelling the Threshold Voltage for p-channel E-mode GaN HFETs. IET Power Electronics. ISSN 1755-4535

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Copyright, Publisher and Additional Information: © Institution of Engineering and Technology. This is an author produced version of a paper subsequently published in IET Power Electronics. Uploaded in accordance with the publisher's self-archiving policy.
Dates:
  • Published (online): 6 November 2017
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 27 Nov 2017 15:11
Last Modified: 27 Nov 2017 15:26
Published Version: https://doi.org/10.1049/iet-pel.2017.0438
Status: Published online
Publisher: Institution of Engineering and Technology
Refereed: Yes
Identification Number: https://doi.org/10.1049/iet-pel.2017.0438

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