Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties

Gelczuk, Ł., Kopaczek, J., Rockett, T.B.O. et al. (2 more authors) (2017) Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties. Scientific Reports, 7. 12824. ISSN 2045-2322

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Copyright, Publisher and Additional Information: © The Author(s) 2017. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. Te images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
Keywords: Electronic devices; Electronics, photonics and device physics; Optical physics; Solar cells
Dates:
  • Accepted: 19 September 2017
  • Published (online): 9 October 2017
  • Published: 9 October 2017
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ROYAL ACADEMY OF ENGINEERING (THE)RF/1516/15/43
Depositing User: Symplectic Sheffield
Date Deposited: 16 Oct 2017 11:04
Last Modified: 14 Nov 2017 13:50
Published Version: https://doi.org/10.1038/s41598-017-13191-9
Status: Published
Publisher: Nature Publishing Group
Refereed: Yes
Identification Number: https://doi.org/10.1038/s41598-017-13191-9
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