On the impact of current generation commercial gallium nitride power transistors on power converter loss

Petersen, A., Stone, D.A. orcid.org/0000-0002-5770-3917 and Foster, M.P. (2017) On the impact of current generation commercial gallium nitride power transistors on power converter loss. Electronics Letters, 53 (22). pp. 1487-1489. ISSN 0013-5194

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Authors/Creators:
Copyright, Publisher and Additional Information: This paper is a postprint of a paper submitted to and accepted for publication in Electronics Letters and is subject to Institution of Engineering and Technology Copyright. The copy of record is available at the IET Digital Library http://digital-library.theiet.org/content/journals/10.1049/el.2017.3183.
Keywords: current generation commercial power transistors; power converter loss; power switching device loss; multilevel converters; GaN
Dates:
  • Published: 2 November 2017
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 08 Jan 2018 11:25
Last Modified: 08 Jan 2018 11:27
Published Version: https://doi.org/10.1049/el.2017.3183
Status: Published
Publisher: Institution of Engineering and Technology (IET)
Refereed: Yes
Identification Number: https://doi.org/10.1049/el.2017.3183

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