Thin Al 1− Ga As 0.56 Sb 0.44 diodes with extremely weak temperature dependence of avalanche breakdown

Zhou, X., Tan, C.H., Zhang, S. et al. (4 more authors) (2017) Thin Al 1− Ga As 0.56 Sb 0.44 diodes with extremely weak temperature dependence of avalanche breakdown. Royal Society Open Science, 4. 170071. p. 170071.

Abstract

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Authors/Creators:
Copyright, Publisher and Additional Information: © 2017 The Authors. Published by the Royal Society under the terms of the Creative Commons Attribution License http://creativecommons.org/licenses/by/4.0/, which permits unrestricted use, provided the original author and source are credited.
Keywords: Al1−xGaxAs0.56Sb0.44; avalanche photodiode; temperature coefficient; avalanche breakdown
Dates:
  • Published: May 2017
  • Published (online): 17 May 2017
  • Accepted: 19 April 2017
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 22 May 2017 14:47
Last Modified: 22 May 2017 14:47
Published Version: https://doi.org/10.1098/rsos.170071
Status: Published
Publisher: The Royal Society
Refereed: Yes
Identification Number: https://doi.org/10.1098/rsos.170071

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