Spatial regularity of InAs-GaAs quantum dots: quantifying the dependence of lateral ordering on growth rate.

Konishi, T., Clarke, E. orcid.org/0000-0002-8287-0282, Burrows, C.W. et al. (3 more authors) (2017) Spatial regularity of InAs-GaAs quantum dots: quantifying the dependence of lateral ordering on growth rate. Scientific Reports , 7 (42606). ISSN 2045-2322

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Copyright, Publisher and Additional Information: © The Author(s) 2017 This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
Dates:
  • Published: 13 February 2017
  • Accepted: 11 January 2017
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 24 Feb 2017 16:20
Last Modified: 18 Jul 2017 09:06
Published Version: https://doi.org/10.1038/srep42606
Status: Published
Publisher: Nature Publishing Group
Refereed: Yes
Identification Number: https://doi.org/10.1038/srep42606
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