All-GaN Integrated Cascode Heterojunction Field Effect Transistors

Jiang, S., Lee, K.B., Guiney, I. et al. (7 more authors) (2017) All-GaN Integrated Cascode Heterojunction Field Effect Transistors. IEEE Transactions on Power Electronics. ISSN 0885-8993

Abstract

Metadata

Authors/Creators:
  • Jiang, S.
  • Lee, K.B.
  • Guiney, I.
  • Miaja, P.F.
  • Zaidi, Z.H.
  • Qian, H.
  • Wallis, D.J.
  • Forsyth, A.J.
  • Humphreys, C.J.
  • Houston, P.A.
Copyright, Publisher and Additional Information: © Institute of Electrical and Electronics Engineers. This work is licensed under a Creative Commons Attribution 3.0 License. For more information, see http://creativecommons.org/licenses/by/3.0/.
Keywords: Semiconductor heterojunctions; Power electronics; Semiconductor devices; Semiconductor switches; SPICE
Dates:
  • Published (online): 17 February 2017
  • Accepted: 12 December 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC)UNSPECIFIED
Depositing User: Symplectic Sheffield
Date Deposited: 22 Feb 2017 10:52
Last Modified: 12 Apr 2017 09:46
Published Version: https://doi.org/10.1109/TPEL.2016.2643499
Status: Published online
Publisher: Institute of Electrical and Electronics Engineers
Refereed: Yes
Identification Number: 10.1109/TPEL.2016.2643499

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